| PART |
Description |
Maker |
| MB84VD23180FM |
64M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM 6400（x16）的快闪记忆体和4M（x16）的静态RAM
|
Spansion, Inc.
|
| MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的（x 8/x16）闪
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73
Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes
CONN, M HEADER ST 1X2 .230
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM
512K X 8 UVPROM, 100 ns, CDIP40
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| MB84VD22281EA MB84VD22281EA-90-PBS MB84VD22281EE M |
32M (X 8/X16) FLASH MEMORY & 8M (X 8/X16) STATIC RAM
POT 2.0K OHM 1/4 SQ CERM SL MT
32M (X 8/X16) FLASH MEMORY & 8M (X 8/X16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA71
|
Fujitsu Component Limited.
Fujitsu Limited
Fujitsu, Ltd.
|
| HY62UF16404D |
x16|3V|55/70|Super Low Power Slow SRAM - 4M x16 | 3V的| 55/70 |超级低功耗SRAM的速度 4
|
GE Security, Inc.
|
| MB84VP23481FK-70 MB84VP23481FK-70PBS |
64M (X16) Page FLASH MEMORY & 32M (X16) Mobile FCRAMTM
|
Spansion Inc.
|
| SST39WF800A-90-4I-M2KE SST39WF800A-90-4I-M2QE SST3 |
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
|
Silicon Storage Technology, Inc.
|
| MB84VD22081EA-90-PBS MB84VD22082EA-90-PBS MB84VD22 |
32M (X 8/X16) FLASH MEMORY & 2M (X 8/X16) STATIC RAM
Stacked MCP (multi-chip package) flash memory & SRAM 32M(x8/x16) flash memory & 2M(x8/x16) static RAM
|
Fujitsu Microelectronics
|
| K522H1HACF-B050 |
2Gb (128M x16) NAND Flash 1Gb (64M x16 ) Mobile DDR SDRAM
|
Samsung semiconductor
|
| MB84VD22281EA-90 MB84VD22282EA-90 MB84VD22283EA-90 |
32M (x 8/x16) FLASH MEMORY & 8M (x 8/x16) STATIC RAM
|
FUJITSU[Fujitsu Media Devices Limited]
|
| MB84VD22194FM MB84VD22194FM-70PBS MB84VD22184FM-70 |
32M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM
|
SPANSION[SPANSION]
|
| HY514264BLJC-60 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
TE Connectivity, Ltd.
|
